IGBT管-IGBT模塊
IRGS30B60K
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 600V
- Ic@100℃: 50A
- Vce(ON)@25℃(typ): 1.95V
更新于 2025-12-06IRG4PC30UD
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 600V
- Ic@100℃: 12A
- Vce(ON)@25℃(typ): 1.95V
IGP15N60T
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 30 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
IRGS4062D
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 600V
- Ic@100℃: 24A
- Vce(ON)@25℃(typ): 1.60V
IKP03N120H2XKSA1
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 9.6 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRGC15B60KD
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 600V
- Vce(ON)@25℃(typ): 1.8V
IHW20N65R5XKSA1
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 20 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
NGTB40N60FLWG
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±30 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 150 ℃ |
| Rad Hard: | No |
IRGR4610D
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 600V
- Ic@100℃: 10A
- Vce(ON)@25℃(typ): 1.70V
SKP04N60
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 9.4 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
IRG7CH75K10EF-R
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 1200V
- Vce(ON)@25℃(typ): 1.90V
IRGP4640
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 600V
- Ic@100℃: 40A
- Vce(ON)@25℃(typ): 1.60V
IKQ100N60TAXKSA1
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 160 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
IKW40N120H3FKSA1
電氣特性 Features
| Configuration: | Single Quad Collector Triple Emitter |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 400 V |
| Maximum Gate Emitter Voltage: | ±6 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRGP4650D
電氣特性 Features
- 低導(dǎo)通壓降(Vceon)IGBT模塊
- Vces: 600V
- Ic@100℃: 50A
- Vce(ON)@25℃(typ): 1.60V