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IRG4PC50SPBF

IRG4PC50SPBF

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:70 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4BC20UDPBF

IRG4BC20UDPBF

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:13 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRGB4059D

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 600V
  • Ic@100℃: 4.0A
  • Vce(ON)@25℃(typ): 1.75V
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

HGTG30N60B3D

HGTG30N60B3D

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRGP6660DPBF

IRGP6660DPBF

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:95 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRGPS46160DPBF

IRGPS46160DPBF

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:240 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

HGT1S10N120BNS

HGT1S10N120BNS

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:35 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRGC4061F

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.65V
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRGC8B60KB

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.8V
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

STGP7NC60HD

STGP7NC60HD

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:25 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

SKW07N120

SKW07N120

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:16.5 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRG4PH40KDPBF

IRG4PH40KDPBF

電氣特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRGC4066B

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.7V
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRGC4274B

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 650V
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊

IRGB4715D

電氣特性 Features

  • 超高速(8-30kHz)IGBT模塊
  • Vces: 650V
  • Ic@100℃: 15A
  • Vce(ON)@25℃(typ): 1.7V
IGBT管-IGBT模塊 更新于 2025-12-06 Tag標(biāo)簽:IGBT管-IGBT模塊