首頁(yè) > 產(chǎn)品展示 > 場(chǎng)效應(yīng)管(MosFET) > IGBT管-IGBT模塊 IHW20N65R5XKSA1 IHW20N65R5XKSA1 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:650 VMaximum Continuous Collector Current:20 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleOperating Temperature:-40 to 175 ℃Rad Hard:No Tag標(biāo)簽:IGBT管-IGBT模塊