首頁 > 產(chǎn)品展示 > 場效應管(MosFET) > IGBT管-IGBT模塊 FGD4536TM FGD4536TM 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:360 VMaximum Gate Emitter Voltage:±30 VMounting:Surface MountRad Hard:No Tag標簽:IGBT管-IGBT模塊