首頁 > 產(chǎn)品展示 > 場效應(yīng)管(MosFET) > IGBT管-IGBT模塊 NGD18N40ACLBT4G NGD18N40ACLBT4G 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:430 VMaximum Continuous Collector Current:15 AMaximum Gate Emitter Voltage:18 VMounting:Surface MountRad Hard:No Tag標簽:IGBT管-IGBT模塊