首頁 > 產(chǎn)品展示 > 場效應(yīng)管(MosFET) > IGBT管-IGBT模塊 STGD20N40LZ STGD20N40LZ 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:390(Typ) VMaximum Continuous Collector Current:25 AMaximum Gate Emitter Voltage:16 VMounting:Surface MountOperating Temperature:-55 to 175 ℃Rad Hard:No Tag標(biāo)簽:IGBT管-IGBT模塊