首頁 > 產(chǎn)品展示 > 場效應(yīng)管(MosFET) > IGBT管-IGBT模塊 IKW40N120H3FKSA1 IKW40N120H3FKSA1 更新于 2025-12-06 電氣特性 FeaturesConfiguration:Single Quad Collector Triple EmitterChannel Type:NMaximum Collector Emitter Voltage:400 VMaximum Gate Emitter Voltage:±6 VMounting:Through HoleRad Hard:No Tag標(biāo)簽:IGBT管-IGBT模塊