更新于 2025-12-06
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 12 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
IKB06N60T
相關(guān)文章
- 高速(1-8kHz)IGBT模塊,Vces: 600V,Ic@100℃: 17A,Vce(ON)@25℃(typ): 1.59V
- 超高速(8-30kHz)IGBT模塊,Vces: 1200V,Vce(ON)@25℃(typ): 2.46V
- 超高速(8-30kHz)IGBT模塊,Vces: 600V,Ic@100℃: 40A,Vce(ON)@25℃(typ): 1.70V
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 75 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |