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IRF6218S

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -150V
  • Vgs: 20V
  • RDS(on) Max@10V: 150.0mΩ
  • Qg(Typ): 21.0nC
  • Rth(JC): 0.61K/W
  • Power Dissipation@TC 25C: 250W
  • Id@TC 25C: -27A
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

PMBFJ175,215

PMBFJ175,215

電氣特性 Features

Configuration:Single
Channel Type:P
Maximum Drain Source Voltage:30 V
Maximum Continuous Drain Current:70 mA
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:30 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

IRLHS2242

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -20V
  • Vgs: 12V
  • RDS(on) Max@4.5V: 31.0mΩ
  • Qg(Typ): 12.0nC
  • Rth(JC): 13K/W
  • Power Dissipation@TC 25C: 9.6W
  • Id@TC 25C: -15A
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

MMBFJ270_R2_00001

MMBFJ270_R2_00001

電氣特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

IRF9530NS

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -100V
  • Vgs: 20V
  • RDS(on) Max@10V: 200.0mΩ
  • Qg(Typ): 38.7nC
  • Rth(JC): 1.9K/W
  • Power Dissipation@TC 25C: 3.8W
  • Id@TC 25C: -14A
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

MMBFJ177LT1G

MMBFJ177LT1G

電氣特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:-25 V
Maximum Drain Gate Voltage:25 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

MMBFJ270_R1_00001

MMBFJ270_R1_00001

電氣特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

IRFU9120N

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -100V
  • Vgs: 20V
  • RDS(on) Max@10V: 480mΩ
  • Qg(Typ): 18nC
  • Rth(JC): 3.2K/W
  • Power Dissipation@TC 25C: 39W
  • Id@TC 25C: -4.1A
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

IRF6217

IRF6217

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -150V
  • Vgs: 20V
  • RDS(on) Max@10V: 2400.0mΩ
  • Qg(Typ): 6.0nC
  • Rth(JC): 20K/W
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

IRLML9301

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 64.0mΩ
  • RDS(on) Max@4.5V: 103.0mΩ
  • Qg(Typ): 4.8nC
  • Rth(JC): 100 (JA)K/W
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

IRLML2246TRPBF-1

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -20V
  • Vgs: 12V
  • RDS(on) Max@4.5V: 135.0mΩ
  • Qg(Typ): 2.9nC
  • Rth(JC): 100 (JA)K/W
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

J175_D26Z

J175_D26Z

電氣特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Through Hole
Rad Hard:No
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

J176_D26Z

J176_D26Z

電氣特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Through Hole
Rad Hard:No
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

MMBFJ175LT1G

MMBFJ175LT1G

電氣特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:-25 V
Maximum Drain Gate Voltage:25 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管

IRF7410PBF-1

IRF7410PBF-1

電氣特性 Features

  • P溝道功率MOS管
  • Vbrdss: -12V
  • Vgs: 8V
  • RDS(on) Max@4.5V: 7.0mΩ
  • Qg(Typ): 91.0nC
  • Rth(JC): 50 (JA)K/W
P溝道場(chǎng)效應(yīng)管 更新于 2025-12-11 Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管