更新于 2025-12-04電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 480mΩ
- Qg(Typ): 18nC
- Rth(JC): 3.2K/W
- Power Dissipation@TC 25C: 39W
- Id@TC 25C: -4.1A
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- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 19.4mΩ,RDS(on) Max@4.5V: 32.5mΩ,Qg(Typ): 14.0nC,Rth(JC): 50 (JA)K/W
- P溝道功率MOS管,Vbrdss: -40V,Vgs: 20V,RDS(on) Max@10V: 112.0mΩ,RDS(on) Max@4.5V: 190.0mΩ,Qg(Typ): 25.0nC,Rth(JC): 62.5 (JA)K/W
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電氣特性 Features
電氣特性 Features
電氣特性 Features
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |