首頁(yè) > 產(chǎn)品展示 > 場(chǎng)效應(yīng)管(MosFET) > P溝道場(chǎng)效應(yīng)管 MMBFJ175LT1G MMBFJ175LT1G 更新于 2025-12-05 電氣特性 FeaturesConfiguration:SingleChannel Type:PMaximum Gate Source Voltage:-25 VMaximum Drain Gate Voltage:25 VOperating Temperature:-55 to 150 ℃Mounting:Surface MountRad Hard:No Tag標(biāo)簽:P溝道場(chǎng)效應(yīng)管