更新于 2025-12-04電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -150V
- Vgs: 20V
- RDS(on) Max@10V: 290.0mΩ
- Qg(Typ): 44.0nC
- Rth(JC): 1.4K/W
- Power Dissipation@TC 25C: 110W
- Id@TC 25C: -13A
相關(guān)文章
- P溝道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 480.0mΩ,Qg(Typ): 18.0nC,Rth(JC): 3.1K/W,Power Dissipation@TC 25C: 3.8W,Id@TC 25C: -6.8A
- P溝道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 8.2mΩ,Qg(Typ): 87.0nC,Rth(JC): 50 (JA)K/W
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 165.0mΩ,RDS(on) Max@4.5V: 270.0mΩ,Qg(Typ): 2.0nC,Rth(JC): 100 (JA)K/W
- P溝道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 580.0mΩ,Qg(Typ): 44.0nC,Rth(JC): 1.4K/W,Power Dissipation@TC 25C: 110W,Id@TC 25C: 13A
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 2.9mΩ,RDS(on) Max@4.5V: 4.8m?,Qg(Typ): 130.0nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 113W