IGBT管-IGBT模塊
IRGB20B60PD1
電氣特性 Features
- WARP 30-150kHz IGBT模塊
- Vces: 600V
- Ic@100℃: 22A
- Vce(ON)@25℃(typ): 2.50V
更新于 2025-12-06IRG7PH46UDPBF
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 108 A |
| Maximum Gate Emitter Voltage: | ±30 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRG6B330UD
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 330V
- Ic@100℃: 40A
- Vce(ON)@25℃(typ): 1.36V
FGH20N60UFDTU
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRG4IBC20UD
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 600V
- Ic@100℃: 6.0A
- Vce(ON)@25℃(typ): 1.85V
IGW08T120
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 16 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
FGB40N60SM
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRG4BC30W-S
電氣特性 Features
- WARP 30-150kHz IGBT模塊
- Vces: 600V
- Ic@100℃: 12A
- Vce(ON)@25℃(typ): 2.10V
IKW30N60TAFKSA1
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 60 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
IGA03N120H2XKSA1
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 3 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
FGA180N33ATDTU
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 330 V |
| Maximum Continuous Collector Current: | 180 A |
| Maximum Gate Emitter Voltage: | ±30 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRG4BC15UD-S
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 600V
- Ic@100℃: 7.8A
- Vce(ON)@25℃(typ): 2.02V
IRGSL4062D
電氣特性 Features
- 超高速(8-30kHz)IGBT模塊
- Vces: 600V
- Ic@100℃: 24A
- Vce(ON)@25℃(typ): 1.60V
NGTB40N60L2WG
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |
STGB8NC60KDT4
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 15 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |