更新于 2025-12-06電氣特性 Features
- 高速(1-8kHz)IGBT模塊
- Vces: 600V
- Ic@100℃: 39A
- Vce(ON)@25℃(typ): 1.45V
相關(guān)文章
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- WARP 30-150kHz IGBT模塊,Vces: 600V,Ic@100℃: 12A,Vce(ON)@25℃(typ): 2.10V
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 12 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 6 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |