首頁 > 產(chǎn)品展示 > 場(chǎng)效應(yīng)管(MosFET) > IGBT管-IGBT模塊 STGB10NB37LZT4 STGB10NB37LZT4 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:440 VMaximum Continuous Collector Current:20 AMaximum Gate Emitter Voltage:16 VMounting:Surface MountRad Hard:No Tag標(biāo)簽:IGBT管-IGBT模塊