更新于 2025-12-06電氣特性 Features
- 低導(dǎo)通壓降(Vceon)IGBT模塊
- Vces: 1200V
- Ic@100℃: 15A
- Vce(ON)@25℃(typ): 1.70V
相關(guān)文章
- 超高速(8-30kHz)IGBT模塊,Vces: 600V,Ic@100℃: 16A,Vce(ON)@25℃(typ): 2.21V
- DC-1kHz(標(biāo)準(zhǔn))IGBT模塊,Vces: 430V,Ic@100℃: 14A,Vce(ON)@25℃(typ): 1.55V
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 17 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 12 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |