首頁(yè) > 產(chǎn)品展示 > 場(chǎng)效應(yīng)管(MosFET) > IGBT管-IGBT模塊 FGH15T120SMD_F155 FGH15T120SMD_F155 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1200 VMaximum Continuous Collector Current:30 AMaximum Gate Emitter Voltage:±25 VMounting:Through HoleOperating Temperature:-55 to 175 ℃Rad Hard:No Tag標(biāo)簽:IGBT管-IGBT模塊