更新于 2025-12-06電氣特性 Features
- IGBT模塊(8-30kHz)
- Vces: 600V
- Ic@100℃: 30A
- Vce(ON)@25℃(typ): 1.65V
相關(guān)文章
- WARP 30-150kHz IGBT模塊,Vces: 600V,Ic@100℃: 8.4A,Vce(ON)@25℃(typ): 2.10V
- 超高速(8-30kHz)IGBT模塊,Vces: 600V,Vce(ON)@25℃(typ): 1.6V
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 20 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 25 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 16 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |