首頁 > 產品展示 > 場效應管(MosFET) > IGBT管-IGBT模塊 GT60J323(Q) GT60J323(Q) 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:600 VMaximum Continuous Collector Current:60 AMaximum Gate Emitter Voltage:±25 VMounting:Through HoleRad Hard:No Tag標簽:IGBT管-IGBT模塊