首頁 > 產(chǎn)品展示 > 場效應(yīng)管(MosFET) > IGBT管-IGBT模塊 IGB01N120H2 IGB01N120H2 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1200 VMaximum Continuous Collector Current:3.2 AMaximum Gate Emitter Voltage:±20 VMounting:Surface Mount Tag標(biāo)簽:IGBT管-IGBT模塊