更新于 2025-12-06
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
IKB20N60H3ATMA1
相關(guān)文章
- 超高速(8-30kHz)IGBT模塊,Vces: 650V,Ic@100℃: 200A,Vce(ON)@25℃(typ): 1.60V
- 超高速(8-30kHz)IGBT模塊,Vces: 600V,Ic@100℃: 16A,Vce(ON)@25℃(typ): 2.21V
- 高速(1-8kHz)IGBT模塊,Vces: 600V,Ic@100℃: 9A,Vce(ON)@25℃(typ): 1.66V
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 150 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
電氣特性 Features
電氣特性 Features
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |