首頁(yè) > 產(chǎn)品展示 > 場(chǎng)效應(yīng)管(MosFET) > IGBT管-IGBT模塊 IRG4BC30FDPBF IRG4BC30FDPBF 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:600 VMaximum Continuous Collector Current:31 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleRad Hard:No Tag標(biāo)簽:IGBT管-IGBT模塊