首頁 > 產(chǎn)品展示 > 場(chǎng)效應(yīng)管(MosFET) > IGBT管-IGBT模塊 IKW30N60TFKSA1 IKW30N60TFKSA1 更新于 2025-12-06 電氣特性 FeaturesMaximum Continuous Collector Current:60 AMaximum Gate Emitter Voltage:±20 V Tag標(biāo)簽:IGBT管-IGBT模塊