首頁(yè) > 產(chǎn)品展示 > 場(chǎng)效應(yīng)管(MosFET) > IGBT管-IGBT模塊 GT60M303(Q) GT60M303(Q) 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:900 VMaximum Continuous Collector Current:60 AMaximum Gate Emitter Voltage:±25 VMounting:Through HoleRad Hard:No Tag標(biāo)簽:IGBT管-IGBT模塊