首頁 > 產(chǎn)品展示 > 場效應管(MosFET) > IGBT管-IGBT模塊 FGH30S130P FGH30S130P 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1300 VMaximum Continuous Collector Current:60 AMaximum Gate Emitter Voltage:±25 VMounting:Through HoleRad Hard:No Tag標簽:IGBT管-IGBT模塊