首頁 > 產品展示 > 場效應管(MosFET) > IGBT管-IGBT模塊 IGW30N100T IGW30N100T 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1000 VMaximum Continuous Collector Current:60 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleRad Hard:No Tag標簽:IGBT管-IGBT模塊