首頁 > 產(chǎn)品展示 > 場效應(yīng)管(MosFET) > IGBT管-IGBT模塊 IHD06N60RAATMA1 IHD06N60RAATMA1 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:600 VMaximum Continuous Collector Current:12 AMaximum Gate Emitter Voltage:±20 VMounting:Surface MountOperating Temperature:-40 to 175 ℃Rad Hard:No Tag標(biāo)簽:IGBT管-IGBT模塊