更新于 2025-12-05電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 60.0mΩ
- Qg(Typ): 120.0nC
- Rth(JC): 0.75K/W
- Power Dissipation@TC 25C: 200W
- Id@TC 25C: -40A
相關(guān)文章
- P溝道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: -32.0mΩ,Qg(Typ): 12.0nC,Rth(JC): 62.5 (JA)K/W
- P溝道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 175.0mΩ,Qg(Typ): 12.7nC,Rth(JC): 3.3K/W,Power Dissipation@TC 25C: 45W,Id@TC 25C: -12A
- P溝道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 20.0mΩ,Qg(Typ): 120.0nC,Rth(JC): 0.75K/W,Power Dissipation@TC 25C: 170W,Id@TC 25C: -74A
- P溝道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 2400.0mΩ,Qg(Typ): 6nC,Rth(JC): 50 (JA)K/W
- P溝道功率MOS管,Vbrdss: -40V,Vgs: 20V,RDS(on) Max@10V: 41.0mΩ,RDS(on) Max@4.5V: 70.0mΩ,Qg(Typ): 53.0nC,Rth(JC): 50 (JA)K/W