更新于 2025-12-04
電氣特性 Features
- P溝道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 70.0mΩ
- RDS(on) Max@4.5V: 130.0mΩ
- Qg(Typ): 27nC
- Rth(JC): 50 (JA)K/W
IRF7205PBF-1
相關(guān)文章
- P溝道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 60.0mΩ,Qg(Typ): 42.0nC,Rth(JC): 1.4K/W,Power Dissipation@TC 25C: 110W,Id@TC 25C: -31A
- P溝道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 175.0mΩ,Qg(Typ): 12.7nC,Rth(JC): 3.3K/W,Power Dissipation@TC 25C: 45W,Id@TC 25C: -12A
- P溝道功率MOS管,Vbrdss: -30V,Vgs: 25V,RDS(on) Max@10V: 14.6mΩ,RDS(on) Max@4.5V: 22.5mΩ,Qg(Typ): 32.0nC,Rth(JC): 3.8K/W,Power Dissipation@TC 25C: 33W,Id@TC 25C: -38A
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
電氣特性 Features
電氣特性 Features
電氣特性 Features
電氣特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |