首頁(yè) > 產(chǎn)品展示 > 場(chǎng)效應(yīng)管(MosFET) > 其它場(chǎng)效應(yīng)管 BF1108R,235 BF1108R,235 更新于 2025-12-05 電氣特性 FeaturesConfiguration:Single Dual GateMaximum Drain Source Voltage:3 VMaximum Continuous Drain Current:10 mAMaximum Gate Source Voltage:7 VMaximum Drain Gate Voltage:7 VOperating Temperature:-65 to 150 ℃Mounting:Surface Mount Tag標(biāo)簽:其它場(chǎng)效應(yīng)管