更新于 2025-12-06
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 30 V |
| Maximum Continuous Drain Current: | 10 mA |
| Maximum Gate Source Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
2SK3666-3-TB-E
相關(guān)文章
- N溝道功率MOS管,Vbrdss: 40V,Vgs: 20V,RDS(on) Max@10V: 5.0mΩ
- N溝道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 75.0mΩ,Id: 4.0A
- N溝道功率MOS管,Vbrdss: 40V,Vgs: 20V,RDS(on) Max@10V: 1.7mΩ,Id: 327A
- N溝道功率MOS管,Vbrdss: 60V,Vgs: 20V,RDS(on) Max@10V: 2.4mΩ,Id: 195A
- N溝道功率MOS管,Vbrdss: 100V,Vgs: 16V,RDS(on) Max@10V: 3.9mΩ,Id: 190A