更新于 2025-12-06
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
FGP20N60UFDTU
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- 超高速(8-30kHz)IGBT模塊,Vces: 650V,Ic@100℃: 90A,Vce(ON)@25℃(typ): 1.7V
- 超高速(8-30kHz)IGBT模塊,Vces: 600V,Ic@100℃: 7.6A,Vce(ON)@25℃(typ): 2.10V
- 超高速(8-30kHz)IGBT模塊,Vces: 600V,Ic@100℃: 7A,Vce(ON)@25℃(typ): 1.80V
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
電氣特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 12 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |