首頁 > 產(chǎn)品展示 > 場效應(yīng)管(MosFET) > IGBT管-IGBT模塊 FGB3245G2_F085 FGB3245G2_F085 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:480 VMaximum Continuous Collector Current:23 AMaximum Gate Emitter Voltage:±10 VMounting:Surface MountOperating Temperature:-40 to 175 ℃Rad Hard:No Tag標簽:IGBT管-IGBT模塊