首頁 > 產(chǎn)品展示 > 場效應(yīng)管(MosFET) > IGBT管-IGBT模塊 SGF5N150UFTU SGF5N150UFTU 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1500 VMaximum Continuous Collector Current:10 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleRad Hard:No Tag標(biāo)簽:IGBT管-IGBT模塊