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電氣特性 Features

• 超高速(8-30kHz)IGBT模塊,Vces: 600V,Ic@100℃: 7.6A,Vce(ON)@25℃(typ): 2.10V

更新于 2025-12-06

電氣特性 Features

Configuration:	Single
Channel Type:	N
Maximum Collector Emitter Voltage:	650 V
Maximum Continuous Collector Current:	120 A
Maximum Gate Emitter Voltage:	±20 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-12-06

電氣特性 Features

Configuration:	Single
Channel Type:	N
Maximum Collector Emitter Voltage:	600 V
Maximum Continuous Collector Current:	12 A
Maximum Gate Emitter Voltage:	±20 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-12-06

電氣特性 Features

Configuration:	Single
Channel Type:	N
Maximum Collector Emitter Voltage:	600 V
Maximum Continuous Collector Current:	80 A
Maximum Gate Emitter Voltage:	±20 V
Mounting:	Through Hole
Operating Temperature:	-55 to 175 ℃
Rad Hard:	No

更新于 2025-12-06

電氣特性 Features

Configuration:	Single Dual Emitter
Channel Type:	N
Maximum Collector Emitter Voltage:	600 V
Maximum Continuous Collector Current:	80 A
Maximum Gate Emitter Voltage:	±20 V
Mounting:	Screw
Rad Hard:	No

更新于 2025-12-06