首頁 > 產(chǎn)品展示 > 場效應(yīng)管(MosFET) > IGBT管-IGBT模塊 NGB8207BNT4G NGB8207BNT4G 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:365 VMaximum Continuous Collector Current:20 AMaximum Gate Emitter Voltage:±15 VMounting:Surface MountRad Hard:No Tag標(biāo)簽:IGBT管-IGBT模塊