首頁 > 產(chǎn)品展示 > 場(chǎng)效應(yīng)管(MosFET) > IGBT管-IGBT模塊 IRG7PG42UDPBF IRG7PG42UDPBF 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1000 VMaximum Continuous Collector Current:85 AMaximum Gate Emitter Voltage:±30 VMounting:Through HoleOperating Temperature:-55 to 150 ℃Rad Hard:No Tag標(biāo)簽:IGBT管-IGBT模塊