首頁 > 產(chǎn)品展示 > 場效應管(MosFET) > IGBT管-IGBT模塊 HGTG11N120CND HGTG11N120CND 更新于 2025-12-06 電氣特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1200 VMaximum Continuous Collector Current:43 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleRad Hard:No Tag標簽:IGBT管-IGBT模塊