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2SA2126-TL-E

2SA2126-TL-E

電氣特性 Features

Pin Count:3
Maximum Collector Emitter Voltage:50 V
Minimum DC Current Gain:200@100mA@2V
Maximum Collector Emitter Saturation Voltage:0.27@50mA@1A|0.52@100mA@2A V
Maximum Collector Base Voltage:50 V
Maximum Power Dissipation:800 mW
Mounting:Surface Mount
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC846BDW1T1G

BC846BDW1T1G

電氣特性 Features

Type:NPN
Pin Count:6
Maximum Collector Emitter Voltage:65 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:380 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

2SC3647T-TD-E

電氣特性 Features

  • 功率晶體管
  • Trans GP BJT NPN 100V 2A
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

2N6490G

2N6490G

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:60 V
Maximum DC Collector Current:15 A
Minimum DC Current Gain:20@5A@4V|5@15A@4V
Maximum Operating Frequency:5(Min) MHz
Maximum Collector Emitter Saturation Voltage:1.3@0.5A@5A|3.5@5A@15A V
Maximum Collector Base Voltage:70 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:1800 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC327-25RL1G

BC327-25RL1G

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.8 A
Minimum DC Current Gain:160@100mA@1V|40@300mA@1V
Maximum Operating Frequency:260(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@500mA V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1500 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

2N5550RLRPG

2N5550RLRPG

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:140 V
Maximum DC Collector Current:0.6 A
Minimum DC Current Gain:60@1mA@5V|60@10mA@5V|20@50mA@5V
Maximum Operating Frequency:300 MHz
Maximum Collector Emitter Saturation Voltage:0.15@1mA@10mA|0.25@5mA@50mA V
Maximum Collector Base Voltage:160 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:625 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC546CTA

BC546CTA

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:65 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:420@2mA@5V
Maximum Operating Frequency:300(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

15C02MH-TL-E

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:15 V
Maximum DC Collector Current:1 A
Minimum DC Current Gain:300@50mA@2V
Maximum Operating Frequency:440(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.28@20mA@400mA V
Maximum Collector Base Voltage:20 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:600 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

2SC4489S-AN

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:100 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:140@100mA@5V
Maximum Operating Frequency:120(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.4@100mA@1A V
Maximum Collector Base Voltage:120 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1000 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC847CW,135

BC847CW,135

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:420@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.2@0.5mA@10mA|0.4@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:200 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

2SB1122T-TD-E

電氣特性 Features

  • 功率晶體管
  • Trans GP BJT PNP 50V 1A
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC857-AMTF

BC857-AMTF

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:110@2mA@5V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:310 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC557ATA

BC557ATA

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:110@2mA@5V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC858B E6327

BC858B E6327

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:30 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:220@2mA@5V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:30 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:330 mW
Mounting:Surface Mount
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管

BC547CTA

BC547CTA

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:420@2mA@5V
Maximum Operating Frequency:300(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-05 Tag標(biāo)簽:功率晶體管