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BC849BE6327

BC849BE6327

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:30 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:30 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:330 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2N5883G

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:60 V
Maximum DC Collector Current:25 A
Minimum DC Current Gain:35@3A@4V|20@10A@4V|4@25A@4V
Maximum Operating Frequency:4(Min) MHz
Maximum Collector Emitter Saturation Voltage:1@1.5A@15A|4@6.25A@25A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-65 to 200 ℃
Maximum Power Dissipation:200000 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SA1706S-AN

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:140@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@1A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1000 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2PD602ASL,215

2PD602ASL,215

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:0.5 A
Minimum DC Current Gain:40@0.5A@10V|170@0.15A@10V
Maximum Operating Frequency:180(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.6@30mA@300mA V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SA1552S-TL-H

2SA1552S-TL-H

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:160 V
Maximum DC Collector Current:1.5 A
Minimum DC Current Gain:140@100mA@5V
Maximum Operating Frequency:120(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.5@50mA@500mA V
Maximum Collector Base Voltage:180 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1000 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC858B E6327

BC858B E6327

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:30 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:220@2mA@5V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:30 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:330 mW
Mounting:Surface Mount
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC847B E6433

BC847B E6433

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:330 mW
Mounting:Surface Mount
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2N5550TAR

2N5550TAR

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:140 V
Maximum DC Collector Current:0.6 A
Minimum DC Current Gain:60@1mA@5V|60@10mA@5V|20@50mA@5V
Maximum Operating Frequency:300 MHz
Maximum Collector Emitter Saturation Voltage:0.15@1mA@10mA|0.25@5mA@50mA V
Maximum Collector Base Voltage:160 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:625 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

15GN01MA-TL-E

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:8 V
Maximum DC Collector Current:0.05 A
Minimum DC Current Gain:200@10mA@5V
Maximum Operating Frequency:1500(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.12@2mA@20mA V
Maximum Collector Base Voltage:15 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:400 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC847C E6327

BC847C E6327

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:420@2mA@5V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:330 mW
Mounting:Surface Mount
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC856BDW1T1G

BC856BDW1T1G

電氣特性 Features

Type:PNP
Pin Count:6
Maximum Collector Emitter Voltage:65 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:220@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:380 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC847BMTF

BC847BMTF

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:300(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:310 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2PB709ART,215

2PB709ART,215

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:210@2mA@10V
Maximum Operating Frequency:70(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.5@10mA@100mA V
Maximum Collector Base Voltage:45 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC817K25E6433HTMA1

BC817K25E6433HTMA1

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.5 A
Minimum DC Current Gain:160@100mA@1V|40@500mA@1V
Maximum Operating Frequency:170(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@500mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SA2127-AE

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:200@100mA@2V|40@1.5A@2V
Maximum Operating Frequency:420(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.4@50mA@1A V
Maximum Collector Base Voltage:50 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1000 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管