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BC856A,215

BC856A,215

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:65 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:125@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SD1835S-AA

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:140@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.4@50mA@1A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:750 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SC4027S-TL-E

2SC4027S-TL-E

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:160 V
Maximum DC Collector Current:1.5 A
Minimum DC Current Gain:140@100mA@5V
Maximum Operating Frequency:120(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.45@50mA@500mA V
Maximum Collector Base Voltage:180 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1000 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SB1302T-TD-E

電氣特性 Features

Type:PNP
Pin Count:4
Maximum Collector Emitter Voltage:20 V
Maximum DC Collector Current:5 A
Minimum DC Current Gain:200@500mA@2V
Maximum Operating Frequency:320(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.5@60mA@3A V
Maximum Collector Base Voltage:25 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1300 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC846B

BC846B

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:65 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:300(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:310 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2N5551RLRPG

2N5551RLRPG

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:160 V
Maximum DC Collector Current:0.6 A
Minimum DC Current Gain:80@1mA@5V|80@10mA@5V|30@50mA@5V
Maximum Operating Frequency:300 MHz
Maximum Collector Emitter Saturation Voltage:0.15@1mA@10mA|0.2@5mA@50mA V
Maximum Collector Base Voltage:180 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:625 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SB815-6-TB-E

2SB815-6-TB-E

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:15 V
Maximum DC Collector Current:0.7 A
Minimum DC Current Gain:200@50mA@2V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.025@0.5mA@5mA|0.8@10mA@100mA V
Maximum Collector Base Voltage:20 V
Operating Temperature:-55 to 125 ℃
Maximum Power Dissipation:200 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

55GN01FA-TL-H

55GN01FA-TL-H

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:10 V
Maximum DC Collector Current:0.07 A
Minimum DC Current Gain:100@10mA@5V
Maximum Operating Frequency:5500(Typ) MHz
Maximum Collector Base Voltage:20 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC847BWH6433XTMA1

BC847BWH6433XTMA1

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC817DPN,125

BC817DPN,125

電氣特性 Features

Type:NPN|PNP
Pin Count:6
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.5 A
Minimum DC Current Gain:160@100mA@1V|40@500mA@1V
Maximum Operating Frequency:100(Min)@NPN|80(Min)@PNP MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@500mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:600 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC856AE6327

BC856AE6327

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:65 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:125@2mA@5V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:330 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC807-16W,135

BC807-16W,135

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.5 A
Minimum DC Current Gain:100@100mA@1V|40@500mA@1V
Maximum Operating Frequency:80(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@500mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:200 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC807-40,235

BC807-40,235

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.5 A
Minimum DC Current Gain:250@100mA@1V|40@500mA@1V
Maximum Operating Frequency:80(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@500mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC847BPDW1T3G

BC847BPDW1T3G

電氣特性 Features

Type:NPN|PNP
Pin Count:6
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA@NPN|0.6@5mA@100mA@NPN|0.3@0.5mA@10mA@PNP|0.65@5mA@100mA@PNP V
Maximum Collector Base Voltage:50 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:380 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2PB1219AR,115

2PB1219AR,115

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:0.5 A
Minimum DC Current Gain:120@150mA@10V|40@500mA@10V
Maximum Operating Frequency:120(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.6@30mA@300mA V
Maximum Collector Base Voltage:60 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:200 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管