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2PD601BSL,215

2PD601BSL,215

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:0.2 A
Minimum DC Current Gain:210@2mA@10V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@10mA@100mA V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2N5088BU

2N5088BU

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:30 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:300@10uA@5V|350@1mA@5V|300@10mA@5V
Maximum Operating Frequency:50(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.5@1mA@10mA V
Maximum Collector Base Voltage:35 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:625 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SD1816T-H

2SD1816T-H

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:100 V
Maximum DC Collector Current:4 A
Minimum DC Current Gain:200@0.5A@5V
Maximum Operating Frequency:180(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.4@0.2A@2A V
Maximum Collector Base Voltage:120 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1000 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2N6490G

2N6490G

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:60 V
Maximum DC Collector Current:15 A
Minimum DC Current Gain:20@5A@4V|5@15A@4V
Maximum Operating Frequency:5(Min) MHz
Maximum Collector Emitter Saturation Voltage:1.3@0.5A@5A|3.5@5A@15A V
Maximum Collector Base Voltage:70 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:1800 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC847BMTF

BC847BMTF

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:300(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:310 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC817K40E6433HTMA1

BC817K40E6433HTMA1

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.5 A
Minimum DC Current Gain:250@100mA@1V|40@500mA@1V
Maximum Operating Frequency:170(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@500mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC846W,115

BC846W,115

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:65 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:110@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.2@0.5mA@10mA|0.4@5mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:200 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SB1124S-TD-H

電氣特性 Features

Type:PNP
Pin Count:4
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:3 A
Minimum DC Current Gain:140@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@100mA@2A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:500 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC857B,235

BC857B,235

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:220@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SD1815S-E

2SD1815S-E

電氣特性 Features

  • 功率晶體管
  • Trans GP BJT NPN 100V 3A
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC848CWE6327

BC848CWE6327

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:30 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:420@2mA@5V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA|0.6@5mA@100mA V
Maximum Collector Base Voltage:30 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2N5886G

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:80 V
Maximum DC Collector Current:25 A
Minimum DC Current Gain:35@3A@4V|20@10A@4V|4@25A@4V
Maximum Operating Frequency:4(Min) MHz
Maximum Collector Emitter Saturation Voltage:1@1.5A@15A|4@6.25A@25A V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 200 ℃
Maximum Power Dissipation:200000 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC857,215

BC857,215

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:125@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC80716MTF

BC80716MTF

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.8 A
Minimum DC Current Gain:100@100mA@1V
Maximum Operating Frequency:100(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@500mA V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:310 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC817-16,215

BC817-16,215

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.5 A
Minimum DC Current Gain:100@100mA@1V|40@500mA@1V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.7@50mA@500mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管