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VS-ST180S20P1

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:2000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:2000 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST300C18C1

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:650 A
Surge Current Rating:8380 A
Repetitive Peak Forward Blocking Voltage:1800 V
Peak On-State Voltage:2.18@1635A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TT570N16KOFHPSA1

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:300 mA
Rated Average On-State Current:570 A
Surge Current Rating:17000 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.53@1700A V
Repetitive Peak Off-State Current:140 mA
Maximum Gate Trigger Voltage:2.2 V
Maximum Gate Trigger Current:250 mA
Operating Temperature:-40 to 135 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TISP8250DR-S

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:250 V
Maximum Holding Current:180(Min) mA
Surge Current Rating:5 A
Repetitive Peak Forward Blocking Voltage:250 V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Current:40 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TYN1012TRG

TYN1012TRG

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:15 mA
Rated Average On-State Current:8 A
Surge Current Rating:145 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:5 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST730C14L0L

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:990 A
Surge Current Rating:18700 A
Repetitive Peak Forward Blocking Voltage:1400 V
Peak On-State Voltage:1.62@2000A V
Repetitive Peak Off-State Current:80 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-VSKH250-16PBF

電氣特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:500 mA
Rated Average On-State Current:250 A
Surge Current Rating:8900 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.44 V
Repetitive Peak Off-State Current:60 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 130 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TT92N12KOF

電氣特性 Features

Type:PCT Module
Repetitive Peak Reverse Voltage:1200 V
Rated Average On-State Current:92 A
Surge Current Rating:1800 A
Repetitive Peak Forward Blocking Voltage:1200 V
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

FOD0710

電氣特性 Features

  • 高CMR,12.5Mbit/秒邏輯門光電耦合器
  • High CMR, 12.5Mbit/sec Logic Gate Optocoupler
  • High Speed Logic Gate
光電耦合器(光耦) 更新于 2025-12-10 Tag標(biāo)簽:光電耦合器(光耦)

VS-ST303C08CFL1

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:620 A
Surge Current Rating:8320 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:2.16@1255A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TN1215-600G

TN1215-600G

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:30 mA
Rated Average On-State Current:8 A
Surge Current Rating:145 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:15 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TISP4P015L1NR-S

TISP4P015L1NR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:8 V
Maximum Holding Current:30(Typ) mA
Repetitive Peak Forward Blocking Voltage:8 V
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST303C12CFJ1

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:620 A
Surge Current Rating:8320 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:2.16@1255A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-180RKI100PBF

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:180 A
Surge Current Rating:4000 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.35@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TISP4C025L1NR-S

TISP4C025L1NR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:16 V
Maximum Holding Current:50(Typ) mA
Repetitive Peak Forward Blocking Voltage:16 V
Repetitive Peak Off-State Current:0.001 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)