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TISP7150F3PS

TISP7150F3PS

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:120 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:5.7 A
Repetitive Peak Forward Blocking Voltage:120 V
Peak On-State Voltage:5@5A V
Repetitive Peak Off-State Current:0.01 mA
Operating Temperature:-65 to 150 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

TISP7380F3PS

TISP7380F3PS

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:270 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:5.7 A
Repetitive Peak Forward Blocking Voltage:270 V
Peak On-State Voltage:5@5A V
Repetitive Peak Off-State Current:0.01 mA
Operating Temperature:-65 to 150 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

TISP5150H3BJR-S

TISP5150H3BJR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:120 V
Maximum Holding Current:600 mA
Surge Current Rating:60 A
Repetitive Peak Forward Blocking Voltage:120 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-12TTS08PBF

VS-12TTS08PBF

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:30 mA
Rated Average On-State Current:8 A
Surge Current Rating:140 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.2@8A V
Repetitive Peak Off-State Current:0.05 mA
Maximum Gate Trigger Voltage:1 V
Maximum Gate Trigger Current:15 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST180S20P1PBF

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:2000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:2000 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-80RIA120PBF

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:200 mA
Rated Average On-State Current:80 A
Surge Current Rating:1990 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.6@250A V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST330C14C0L

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:720 A
Surge Current Rating:9420 A
Repetitive Peak Forward Blocking Voltage:1400 V
Peak On-State Voltage:1.96@1810A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST280S06P1V

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:280 A
Surge Current Rating:8220 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.28@880A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST280C06C1

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:500 A
Surge Current Rating:8220 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.36@1050A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-25RIA60

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:130 mA
Rated Average On-State Current:25 A
Surge Current Rating:440 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.7@79A V
Repetitive Peak Off-State Current:10 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:60 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-65 to 125 ℃
Mounting:Stud
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

FODM452

電氣特性 Features

  • 高速晶體管輸出光電耦合器
  • 5-Pin MFP High Speed Transistor Output Optocoupler
  • High Performance Transistor
光電耦合器(光耦) 更新于 2025-12-12 Tag標(biāo)簽:光電耦合器(光耦)

VS-16RIA20

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:200 V
Maximum Holding Current:130 mA
Rated Average On-State Current:16 A
Surge Current Rating:360 A
Repetitive Peak Forward Blocking Voltage:200 V
Peak On-State Voltage:1.75@50A V
Repetitive Peak Off-State Current:10 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:60 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-65 to 125 ℃
Mounting:Stud
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

TYN1225RG

TYN1225RG

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:50 mA
Rated Average On-State Current:16 A
Surge Current Rating:314 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.6@50A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:40 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST730C12L0L

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:990 A
Surge Current Rating:18700 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.62@2000A V
Repetitive Peak Off-State Current:80 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-111RKI80PBF

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:200 mA
Rated Average On-State Current:110 A
Surge Current Rating:2180 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.57@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 140 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)