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TISP61521DR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:175 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:15 A
Repetitive Peak Forward Blocking Voltage:175 V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:3 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST230C12C0

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:410 A
Surge Current Rating:5970 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.69@880A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST230S12P0V

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:230 A
Surge Current Rating:5970 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.55@720A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

TISP4350J1BJR-S

TISP4350J1BJR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:275 V
Maximum Holding Current:20(Min) mA
Surge Current Rating:100 A
Repetitive Peak Forward Blocking Voltage:275 V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST110S12P0V

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:110 A
Surge Current Rating:2830 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.52@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST223C04CFN1

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:390 A
Surge Current Rating:6130 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.58@600A V
Repetitive Peak Off-State Current:40 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-VSKH71/10

電氣特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:250 mA
Rated Average On-State Current:75 A
Surge Current Rating:1940 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.59 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

TT92N12KOFB4

電氣特性 Features

Type:PCT Module
Repetitive Peak Reverse Voltage:1200 V
Rated Average On-State Current:92 A
Surge Current Rating:1800 A
Repetitive Peak Forward Blocking Voltage:1200 V
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

TPDV625

電氣特性 Features

Type:Alternistor
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:50(Typ) mA
Surge Current Rating:390 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.8@35A V
Repetitive Peak Off-State Current:0.02 mA
Maximum Gate Trigger Voltage:1.5 V
Maximum Gate Trigger Current:150 mA
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

TN1215-600G-TR

TN1215-600G-TR

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:30 mA
Rated Average On-State Current:8 A
Surge Current Rating:145 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:15 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST180S08P0VPBF

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

TN805-600B-TR

TN805-600B-TR

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:25 mA
Rated Average On-State Current:5 A
Surge Current Rating:73 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@16A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:5 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-40TPS08PBF

VS-40TPS08PBF

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:150 mA
Rated Average On-State Current:35 A
Surge Current Rating:600 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.85@110A V
Repetitive Peak Off-State Current:0.5 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

VS-25TTS08PBF

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:100 mA
Rated Average On-State Current:16 A
Surge Current Rating:350 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.25@16A V
Repetitive Peak Off-State Current:0.5 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:45 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-12 Tag標(biāo)簽:可控硅(晶閘管)

FODM2701

電氣特性 Features

  • 光電晶體管輸出光電耦合器
  • 4-pin Full Pitch MFP Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光電耦合器(光耦) 更新于 2025-12-12 Tag標(biāo)簽:光電耦合器(光耦)