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TT500N16KOFHPSA2

電氣特性 Features

Type:PCT Module
Repetitive Peak Reverse Voltage:1800 V
Maximum Holding Current:300 mA
Rated Average On-State Current:500 A
Surge Current Rating:17000 A
Repetitive Peak Forward Blocking Voltage:1800 V
Peak On-State Voltage:1.45@1700A V
Repetitive Peak Off-State Current:100 mA
Maximum Gate Trigger Voltage:2.2 V
Maximum Gate Trigger Current:250 mA
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST110S12P2V

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:110 A
Surge Current Rating:2830 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.52@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TISP7082F3PS

TISP7082F3PS

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:66 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:5.7 A
Repetitive Peak Forward Blocking Voltage:66 V
Peak On-State Voltage:5@5A V
Repetitive Peak Off-State Current:0.01 mA
Operating Temperature:-65 to 150 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST300C20C0

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:2000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:650 A
Surge Current Rating:8380 A
Repetitive Peak Forward Blocking Voltage:2000 V
Peak On-State Voltage:2.18@1635A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST330C08L1

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:650 A
Surge Current Rating:9420 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.9@1730A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST733C08LFM0

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:940 A
Surge Current Rating:20950 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.63@1700A V
Repetitive Peak Off-State Current:75 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TPDV1240RG

電氣特性 Features

Type:TRIAC
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:50 mA
Surge Current Rating:590 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.8@35A V
Repetitive Peak Off-State Current:0.02 mA
Maximum Gate Trigger Voltage:1.5 V
Maximum Gate Trigger Current:200 mA
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-80RIA80

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:200 mA
Rated Average On-State Current:80 A
Surge Current Rating:1990 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.6@250A V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-111RKI80

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:200 mA
Rated Average On-State Current:110 A
Surge Current Rating:2180 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.57@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 140 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST083S08PFM0

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:85 A
Surge Current Rating:2560 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:2.15@300A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TISP5110H3BJR-S

TISP5110H3BJR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:80 V
Maximum Holding Current:600 mA
Surge Current Rating:60 A
Repetitive Peak Forward Blocking Voltage:80 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST083S08PFM1

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:85 A
Surge Current Rating:2560 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:2.15@300A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST700C18L1

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:910 A
Surge Current Rating:16400 A
Repetitive Peak Forward Blocking Voltage:1800 V
Peak On-State Voltage:1.8@2000A V
Repetitive Peak Off-State Current:80 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TISP5080H3BJR-S

TISP5080H3BJR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:65 V
Maximum Holding Current:600 mA
Surge Current Rating:60 A
Repetitive Peak Forward Blocking Voltage:65 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TN815-600B-TR

TN815-600B-TR

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:40 mA
Rated Average On-State Current:5 A
Surge Current Rating:73 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@16A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:15 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)