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VS-25TTS16SPBF

VS-25TTS16SPBF

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:150 mA
Rated Average On-State Current:16 A
Surge Current Rating:350 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.25@16A V
Repetitive Peak Off-State Current:0.5 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:45 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TS110-8A1

TS110-8A1

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:700 V
Maximum Holding Current:12 mA
Rated Average On-State Current:1.25@Tl=53C A
Surge Current Rating:21 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.6@2.5V V
Maximum Gate Trigger Voltage:0.8 V
Maximum Gate Trigger Current:0.1 mA
Maximum Gate Peak Inverse Voltage:7.5(Min) V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST300C04C1

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:650 A
Surge Current Rating:8380 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:2.18@1635A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST300C18C1L

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:650 A
Surge Current Rating:8380 A
Repetitive Peak Forward Blocking Voltage:1800 V
Peak On-State Voltage:2.18@1635A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

FOD053L

FOD053L

電氣特性 Features

  • 1Mbit/s,3.3V,1kV/us,雙通道高速晶體管輸出光電耦合器
  • SO8, 1MBIT/S High Speed Dual Channel Transistor- 1kV/us 3.3V
  • Low Voltage, High Performance
光電耦合器(光耦) 更新于 2025-12-10 Tag標(biāo)簽:光電耦合器(光耦)

VS-VSKH105/12

電氣特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:250 mA
Rated Average On-State Current:105 A
Surge Current Rating:2094 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.8 V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 130 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TISP83121DR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:100 V
Maximum Holding Current:300 mA
Surge Current Rating:22 A
Repetitive Peak Forward Blocking Voltage:100 V
Repetitive Peak Off-State Current:0.01 mA
Maximum Gate Trigger Voltage:1.8 V
Maximum Gate Trigger Current:200 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TS420-400B-TR

TS420-400B-TR

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:5 mA
Rated Average On-State Current:2.5 A
Surge Current Rating:33 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.6@8A V
Repetitive Peak Off-State Current:5 mA
Maximum Gate Trigger Voltage:0.8 V
Maximum Gate Trigger Current:0.2 mA
Maximum Gate Peak Inverse Voltage:8(Min) V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST333C08LFL1

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:620 A
Surge Current Rating:11500 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.96@1810A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST173C10CFK1

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:330 A
Surge Current Rating:4900 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:2.07@600A V
Repetitive Peak Off-State Current:40 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST1280C06K1

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:2310 A
Surge Current Rating:44500 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.44@8000A V
Repetitive Peak Off-State Current:100 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST303S12PFK0

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:300 A
Surge Current Rating:8320 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:2.16@1255A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TT425N16KOF

電氣特性 Features

Type:PCT Module
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:300 mA
Rated Average On-State Current:510 A
Surge Current Rating:14500 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.5@1500A V
Repetitive Peak Off-State Current:80 mA
Maximum Gate Trigger Voltage:1.5 V
Maximum Gate Trigger Current:250 mA
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TN1205H-6G

TN1205H-6G

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:20 mA
Rated Average On-State Current:7.6 A
Surge Current Rating:126 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:5 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST180C12C1

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:350 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.96@750A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)