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TISP4400T3BJR-S

TISP4400T3BJR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:335 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:30 A
Repetitive Peak Forward Blocking Voltage:335 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-VSKL41/06

電氣特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:200 mA
Rated Average On-State Current:45 A
Surge Current Rating:985 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.81 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST1000C20K1

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:2000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:1473 A
Surge Current Rating:21200 A
Repetitive Peak Forward Blocking Voltage:2000 V
Peak On-State Voltage:1.8@3000A V
Repetitive Peak Off-State Current:100 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST280C04C0

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:500 A
Surge Current Rating:8220 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.36@1050A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-VSKT41/14

電氣特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1400 V
Maximum Holding Current:200 mA
Rated Average On-State Current:45 A
Surge Current Rating:985 A
Repetitive Peak Forward Blocking Voltage:1400 V
Peak On-State Voltage:1.81 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST110S08P0VPBF

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:110 A
Surge Current Rating:2830 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.52@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-181RKI80

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:180 A
Surge Current Rating:4000 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.35@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TS820-800BM-TR

TS820-800BM-TR

電氣特性 Features

Type:SCR
Maximum Holding Current:5 mA
Repetitive Peak Off-State Current:5 mA
Maximum Gate Trigger Voltage:0.8 V
Maximum Gate Trigger Current:0.2 mA
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-111RKI40PBF

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:200 mA
Rated Average On-State Current:110 A
Surge Current Rating:2180 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.57@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 140 ℃
Mounting:Stud
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST303S04PFN0

電氣特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:300 A
Surge Current Rating:8320 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:2.16@1255A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-VSKL41/12

電氣特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:200 mA
Rated Average On-State Current:45 A
Surge Current Rating:985 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.81 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-110RKI40

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:200 mA
Rated Average On-State Current:110 A
Surge Current Rating:2180 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.57@350A V
Repetitive Peak Off-State Current:10 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 140 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

TISP4A270H3BJR-S

TISP4A270H3BJR-S

電氣特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:160 V
Maximum Holding Current:600 mA
Surge Current Rating:60 A
Repetitive Peak Forward Blocking Voltage:160 V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-ST180S20P1PBF

電氣特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:2000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:2000 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)

VS-VSKL91/08

電氣特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:250 mA
Rated Average On-State Current:95 A
Surge Current Rating:2094 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.73 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶閘管) 更新于 2025-12-10 Tag標(biāo)簽:可控硅(晶閘管)