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2SC3649S-TD-H

電氣特性 Features

Type:NPN
Pin Count:4
Maximum Collector Emitter Voltage:160 V
Maximum DC Collector Current:1.5 A
Minimum DC Current Gain:140@100mA@5V
Maximum Operating Frequency:120(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.45@50mA@500mA V
Maximum Collector Base Voltage:180 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1500 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC817SUE6327HTSA1

BC817SUE6327HTSA1

電氣特性 Features

Type:NPN
Pin Count:6
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.5 A
Minimum DC Current Gain:160@100mA@1V|40@500mA@1V
Maximum Operating Frequency:170(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.4@50mA@500mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:N/A to 150 ℃
Maximum Power Dissipation:1000 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC856UE6327

BC856UE6327

電氣特性 Features

Type:PNP
Pin Count:6
Maximum Collector Emitter Voltage:65 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:250(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC847BM,315

BC847BM,315

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.2@0.5mA@10mA|0.4@5mA@100mA V
Maximum Collector Base Voltage:50 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:250 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SB1216S-TL-H

2SB1216S-TL-H

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:100 V
Maximum DC Collector Current:4 A
Minimum DC Current Gain:140@0.5A@5V
Maximum Operating Frequency:180(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.5@0.2A@2A V
Maximum Collector Base Voltage:120 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1000 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SC6099-TL-E

2SC6099-TL-E

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:100 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:300@100mA@5V
Maximum Operating Frequency:300(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.165@100mA@1A V
Maximum Collector Base Voltage:120 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:800 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SC4614T-AN

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:160 V
Maximum DC Collector Current:6 A
Minimum DC Current Gain:200@100mA@5V
Maximum Operating Frequency:120(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.45@50mA@500mA V
Maximum Collector Base Voltage:180 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1000 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC846W,135

BC846W,135

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:65 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:110@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.2@0.5mA@10mA|0.4@5mA@100mA V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 150 ℃
Maximum Power Dissipation:200 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2N4401BU

2N4401BU

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:40 V
Maximum DC Collector Current:0.6 A
Minimum DC Current Gain:20@0.1mA@1V|40@1mA@1V|80@10mA@1V|100@150mA@1V|40@500mA@2V
Maximum Operating Frequency:250(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.4@15mA@150mA|0.75@50mA@500mA V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:625 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2N5884G

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:80 V
Maximum DC Collector Current:25 A
Minimum DC Current Gain:35@3A@4V|20@10A@4V|4@25A@4V
Maximum Operating Frequency:4(Min) MHz
Maximum Collector Emitter Saturation Voltage:1@1.5A@15A|4@6.25A@25A V
Maximum Collector Base Voltage:80 V
Operating Temperature:-65 to 200 ℃
Maximum Power Dissipation:200000 mW
Mounting:Through Hole
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SC5569-TD-E

電氣特性 Features

Type:NPN
Pin Count:4
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:7 A
Minimum DC Current Gain:200@500mA@2V
Maximum Operating Frequency:330(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.24@175mA@3.5A|0.17@40mA@2A V
Maximum Collector Base Voltage:100 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:1300 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

50C02CH-TL-E

50C02CH-TL-E

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:0.5 A
Minimum DC Current Gain:300@10mA@2V
Maximum Operating Frequency:500(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.1@10mA@100mA V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:700 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

BC847BPDW1T3G

BC847BPDW1T3G

電氣特性 Features

Type:NPN|PNP
Pin Count:6
Maximum Collector Emitter Voltage:45 V
Maximum DC Collector Current:0.1 A
Minimum DC Current Gain:200@2mA@5V
Maximum Operating Frequency:100(Min) MHz
Maximum Collector Emitter Saturation Voltage:0.25@0.5mA@10mA@NPN|0.6@5mA@100mA@NPN|0.3@0.5mA@10mA@PNP|0.65@5mA@100mA@PNP V
Maximum Collector Base Voltage:50 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:380 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

12A02CH-TL-E

12A02CH-TL-E

電氣特性 Features

Type:PNP
Pin Count:3
Maximum Collector Emitter Voltage:12 V
Maximum DC Collector Current:1 A
Minimum DC Current Gain:300@10mA@2V
Maximum Operating Frequency:450(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.24@20mA@400mA V
Maximum Collector Base Voltage:15 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:700 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管

2SD1801S-TL-E

2SD1801S-TL-E

電氣特性 Features

Type:NPN
Pin Count:3
Maximum Collector Emitter Voltage:50 V
Maximum DC Collector Current:2 A
Minimum DC Current Gain:140@100mA@2V
Maximum Operating Frequency:150(Typ) MHz
Maximum Collector Emitter Saturation Voltage:0.4@50mA@1A V
Maximum Collector Base Voltage:60 V
Operating Temperature:-55 to 150 ℃
Maximum Power Dissipation:800 mW
Mounting:Surface Mount
Rad Hard:No
功率晶體管 更新于 2025-12-06 Tag標(biāo)簽:功率晶體管